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In this paper, we prepared the CIGS thin films with various [Cu]/[In + Ga] ratios by selenization of Cu 0.8 Ga 0.2 and In 2 Se 3 precursor films. The properties of Cu(In,Ga)Se 2 film and related solar cell were investigated. Raman spectra confirm that the secondary Cu 2−x Se phase tends to segregate at film surface. SEM results show that the grain-size...
Cu 2 ZnSnS 4 (CZTS) films were fabricated from a ceramic quaternary target, through middle frequency magnetron sputtering. A post sulfurization process was applied for the sputtered films and sulfurization temperatures ranging from 460 °C to 580 °C were utilized. It has been found that obvious Zn loss exists during the sputtering, making the sputtered films become Zn poor although...
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