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Using vapour-liquid-solid mechanism, we have grown Ge and composition modulated Ge:SnO2 nanowires on gold coated silicon substrates with diameter distribution ranging from 30-100 nm, and length more than tens of micrometers. The outer sheath of pure Ge nanowires consists of GeO2 as revealed from the XRD and TEM analyses. Raman spectra of the as-grown nanowires exhibit a blue shift, which is attributed...
Self-assembled nano-sized Ge islands have been grown on Si (001) substrates using a solid source molecular beam epitaxy. Detailed island morphological studies at different deposition temperatures and flux rate of as-grown and annealed nanocrystals are reported. Both the alloy composition and in-plane strain in the grown islands have been determined from high-resolution XRD and Raman study. The shape...
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