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We report the Raman, continuous-wave (CW) photoluminescence (PL) measurements of Ge(Si)/Si samples with an islands like morphology. The values of composition and elastic deformation of the self-assembled Ge(Si) nanoislands formed at 550degC were determined by Raman scattering spectroscopy. Due to larger islands size, and intermixing of Si and Ge, the PL peak is red shifted for longer time deposition...
Self-assembled nano-sized Ge islands have been grown on Si (001) substrates using a solid source molecular beam epitaxy. Detailed island morphological studies at different deposition temperatures and flux rate of as-grown and annealed nanocrystals are reported. Both the alloy composition and in-plane strain in the grown islands have been determined from high-resolution XRD and Raman study. The shape...
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