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CdSe nanowires were prepared by a simple DC electrochemical process using porous anodic alumina templates. FESEM micrographs demonstrated the growth of CdSe nanowires of diameter 200-300 nm by filling up the nano-pores in alumina. X-ray diffraction patterns revealed the growth of CdSe with hexagonal phase. The absorption spectrum showed a band gap value nearer to bulk CdSe. Room temperature photoluminescence...
Cd/sub 1-x/Zn/sub x/S films (0<or=x<or=0.2) were characterized by electrical and optical measurements to obtain the optimum deposition condition for device fabrication on p-type single-crystal InP (Zn doped) with
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