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Highly-strained Ge-in-STI pFETs on SiGe55% SRBs are demonstrated with mobilities up to 550 cm2/Vs and record NBTI reliability at TINV∼1.7 nm. Short channel sGe pFET devices down to 35nm gate length are also reported. This work makes the first use of a germanide in contacts to solve void issues and a high Ge (75%) SiGe S/D for strain enhancement of mobility with an RMG flow providing module learning...
The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.
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