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In this work, the interface coupling in short-channel Multiple-gate MOSFETs (MuGFETs) structures is modelled. Based on the solution of the 3D Laplace's equation, the short-channel subthreshold characteristics (Subthreshold current, Subthreshold Slope, Roll-off and DIBL) are calculated and compared to experimental data with an excellent agreement, and without the need of any fitting parameters. The...
A core model is developed in order to obtain, for the first time, analytical expressions of the subthreshold characteristics of advanced Pi-gate Multiple-gate FET transistors. Based on the resolution of the 3D Laplace's equation, the interface coupling in the structure is accurately described. The short-channel characteristics (Subthreshold Slope and DIBL) are calculated and compared to experimental...
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