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In this paper we compare two innovative approaches to the integration of Ge-channel on Insulator MOSFETs from conventional Bulk-Si substrates. The first one is based on the Ge-condensation process, and the second one relies on the epitaxy of a pure ultra-thin 2.3 nm-thick Ge layer performed directly on Si. With the second approach, we demonstrate for the first time highly-performant Localized GeOI...
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