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Gallium oxide (Ga2O3) deposited by plasma-enhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 1011 cm−2 eV−1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD...
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