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Bandwidth limitation of current wireless frequency bands and the energy consumption are challenges that have to be addressed by future 5G wireless networks. The millimeter wave (mm-wave) spectrum, spanning 30 GHz to 300 GHz, is a prime candidate to resolve the bandwidth limitation issue in future networks. High-speed electronics, though, are quite energy-inefficient for such mm-wave signal generation...
In this paper, a high-speed and low-power latched comparator in a 65-nm CMOS process is presented. In our proposed structure, a latched circuit with an adjusted delayed-clock with no static power consumption is added to the conventional latch-type comparator in order to enhance the clock frequency and reduce the power consumption and the delay time. Therefore, the maximum clock frequency of our proposed...
This paper presents a low-power instrumentational amplifier (IA) design for EEG signal acquisition for seizure detection. The proposed structure provides a power per channel of 0.92 µW at supply voltage of 0.8 V. Due to the use of buffer structures and impedance boosting loops in the proposed design, the input impedance has reached up to 160 GΩ and 16 GΩ at 1 Hz and 10 Hz frequencies, respectively...
A hybrid silicon ring laser in which the counter-clockwise circulating power is coupled into the clockwise mode is demonstrated. Unidirectional clockwise laser output is achieved with a suppression ratio of 19 dB over the counter-clockwise mode.
A novel ultra-broadband spectral beam combiner is designed and demonstrated spanning greater than four octaves from ultraviolet to mid-wave infrared bands with low M squared output.
We present results from two hybrid silicon mode-locked lasers each with a 2GHz cavity and one with an intra-cavity filter; which allows for 20GHz operation and 55dB supermode noise suppression compared to harmonic mode-locking.
A combination of low loss and small bend radius Si3N4 waveguide regions are integrated with one etch step. Propagation losses of 1.5 dB/m and 7 dB/m are measured with a transition loss of ≤0.5 dB/taper.
An integrated delay line coupled cavity was used to stabilize a 10 GHz mode locked laser. Use of the cavity reduced the RF 3 dB linewidth for passive mode-locking from 1.06 MHz to 15 kHz.
We show our progress on ring-based optical isolators and circulators, designed on both silica and silicon based photonic integration platforms. Isolation levels of better than −20 dB have been shown theoretically and −9 dB experimentally.
We demonstrate the feasibility of using a hybrid silicon mode-locked laser in a coupled optoelectronic oscillator configuration for generating low phase noise 20-GHz microwave signal. The free-running oscillator has a 3dB RF linewidth of 14kHz.
The performance of a tapered mode converter inside a hybrid silicon laser was measured to determine loss. Several taper lengths were investigated, and the best performing device had a taper loss of 2.7dB.
We demonstrate an integrated silicon and ultra-low-loss silica waveguide platform. Coupling between layers is achieved with (0.4±0.2) dB of loss per transition and a 20 nm 3-dB bandwidth.
We demonstrate a Si3N4 waveguide optical resonator with a record high quality factor of 55 million using planar waveguide couplers. Investigations into coupler losses are studied to further increase performance.
A novel ring resonator based 1×16 optical power splitter is demonstrated on Si3N4 waveguides with excellent uniformity (0.4dB) and low excess loss (0.9dB). The device is promising for high port count splitters without cascading.
Single-frequency hybrid silicon compact DFB and microring lasers are presented, showing the potential of this technology for future energy-efficient transmitters in wavelength multiplexed optical interconnects.
We compare ultra-low-loss silica waveguides with PECVD SiO2, borophosphosilicate glass (BPSG), and wafer-bonded thermal oxide upper claddings. We demonstrate fiber-like (0.045 dB/m) total propagation loss in planar waveguides with bonded thermal oxide upper claddings.
We demonstrate record low (0.045 dB/m) total propagation loss in silica-on-silicon planar waveguides fabricated with wafer-bonded thermal oxide upper claddings.
Two types of hybrid silicon tapers are studied. Single taper loss is 0.3 – 0.5 dB, enabling integration of III/V actives on silicon-on-insulator passive circuitry with low loss. Keywords-Hybrid integration, silicon-on-insulator technology
We report an approach to make ultra-low-loss waveguides using fixed-index-contrast stoichiometric Si3N4. A record low single-mode propagation loss of 0.70 ± 0.02 dB/m was achieved while multi-mode designs have fundamental mode loss as low as 0.43 ± 0.04 dB/m.
We characterize an approach to make compact low loss silica on silicon waveguides and achieve good agreement with theory. Record low losses of 8 dB/m for 0.5-mm bend radius down to 3 dB/m for 2-mm bend radius were achieved.
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