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A single photoconductive semiconductor switch with electrode gap of 18mm was fabricated from semi-insulating GaAs, of which the most notable defect was EL2. Photoconductivity tests were performed using 1064nm wavelength laser pulse. The PCSS began to work in the nonlinear mode at 10kV with the laser energy of 10.6mJ. The highest photocurrent tested for 11.4mJ optical excitation at the bias voltage...
The paper discussed the relationship between the structure of VIS, especially the thickness of single insulator ring, and working performances of VIS. Utilized combined analysis method with circuit simulation, MFI criterion calculation and flashover probability analysis, obtained the effects of MFI on effective pulse width teff and on flashover probability F(t) of whole stack. The teff will decrease...
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