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The mechanism that phosphorus (P) impurities, one of the most commonly used impurities in silicon (Si), affect the tensile mechanical responses of [1 1 0]-Si nano-wires (NWs) is investigated using molecular dynamics (MD) with a Modified Embedded Atom Method (MEAM) potential. Tensile tests at 300K are carried out for unnotched and notched Si NWs. For unnotched cases, P impurities randomly replace Si...
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