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The manufacturability of blue LED structures grown on 6‐inch Si (111) substrates is reported. The totally epi‐structure thickness is only 3.75 μm, which allows faster epitaxy process throughput and lower manufacturing costs. Well controlled strain engineering leads to a room temperature wafer bow of 0 ± 5 μm and a highly uniform photoluminescence wavelength standard deviation of 1.1 nm. XRD FWHM (002)...
We report on the crystal quality and on‐wafer device performance of GaN‐on‐Si LED wafers grown by metalorganic chemical vapour deposition on Si(111) substrates. Average XRD FWHM of 343 arcsec and 456 arcsec for the 002 and 102 reflections, respectively, are measured for GaN‐on‐Si template wafers and a dislocation density around 5×108 cm–2 is determined via etch pit density. Excellent electroluminescence...
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