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In this paper, leakage mechanisms in ballistic deflection transistors (BDT) are studied using Finite Element Analysis (FEA) based on a simple conductive media model, a BDT simulator based on the semi-classical billiard model, and experimental measurements. In BDT, by simply tailoring the architecture, the electron transport can be, to a large extent, modified and controlled to reduce leakage. Since...
A multi-purpose simulator for ballistic nanoelectronic devices, based on classical mechanics of electrons at the Fermi level, has been successfully implemented. Current-voltage characteristics and magnetoresistance phenomena consistent with published experimental data have been observed. Based on simulator results, device design guidelines for a new type of transistor which operates on ballistic transport...
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