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We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mum and 2.0 mum, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p+-n-n+ doping...
In this work we investigate the series resistances in vertical MOSFETs incorporating the fillet local oxidation (FILOX) structure that serves to reduce the gate to drain/source overlap capacitances. The series resistances are modeled analytically and the important influencing factors, namely gate bias dependence and the asymmetric nature of the device, are identified. We extract by simulation, Rd...
A new planar split dual gate MOSFET device (PSDG MOSFET) is reported for the first time. The theoretical calculation, 3D device simulation as well as the experiment data show that with the two independent split dual gates in PSDG MOSFET, it can provide dynamical control of the device characteristics, such as threshold voltage (Vt) and sub-threshold swing (SS) as well as the Idsat of the device
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