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Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low $10^{11}$ cm$^{\mathrm {-2}}$ eV$^{\mathrm {-1}}$ range. Total ionizing dose (TID) effects have been studied on GaAs MOSFETs with Al2O3/La2O3 and Al2O3/La1.8Y0.2O3 gate oxides. Charge trapping mechanisms in GaAs MOSFETs are studied by the AC...
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