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A low-power 40 Gb/s optical receiver is reported. The receiver consists of a broadband photodiode followed by a low-noise transimpedance amplifier front-end, a 3-stage Cherry-Hooper limiting amplifier, an output driver, and an offset cancellation network. The photodiode is fabricated in a 0.18 µm Ge-on-SOI process and the electronic chip is fabricated in a 0.13 µm SiGe BiCMOS process. The receiver...
A compact, power-efficient broadband amplifier is demonstrated in a 0.13-micron SiGe BiCMOS process. The amplifier uses a lumped design topology with a shunt-feedback Darlington input stage and an emitter-follower buffered cascode post-amplifier stage. The overall amplifier consumes 92 mW DC power, and exhibits 20-dB gain. The reported 67-GHz bandwidth is limited by available test equipment, and the...
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