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An analytical model for the surface potential and drain current of dual-material gate-all-around tunnel field-effect transistors based on evanescent mode analysis (EMA) is introduced. In the EMA, the channel potential is a sum of the solutions of the one-dimensional (1D) Poisson equation and two-dimensional (2D) Laplace equation. The EMA is preferred over the parabolic approximation due to the invariance...
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