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An analytical model for the surface potential and drain current of dual-material gate-all-around tunnel field-effect transistors based on evanescent mode analysis (EMA) is introduced. In the EMA, the channel potential is a sum of the solutions of the one-dimensional (1D) Poisson equation and two-dimensional (2D) Laplace equation. The EMA is preferred over the parabolic approximation due to the invariance...
This paper examines a Junctionless quadruple gate (JLQG) MOSFET for analog and linearity distortion performance by numerically calculating transconductance and its higher order derivatives (gm1, gm2and gm3), VIP2, VIP3, IIP3 and IMD3. Influence of various physical device parameters: channel length, height (or width), gate oxide thickness, and channel doping concentration on the linearity distortion...
We present a tool which gives detailed feedback to application developers on how their programs can be made amenable to parallelization. Also, the tool automatically parallelizes the code for a large number of constructs. Since the tool outputs a parallelized code with OpenMP pragmas, the feedback cycle can be run any number of times till the desired performance is achieved. ParTool also acts as a...
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