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1.27-μm high-density quantum-dot DFB lasers for 10G-EPON were developed. Fabricated lasers exhibited temperature-stable light-current characteristics and clearly-opened 10.3-Gb/s eye-diagrams with a high averaged output power of +4.5dBm from −10°C to 85°C.
We have been developing an electromagnetic field intensity measurement system using an absorption screen made of dielectric material. In this developed system, a very small change of temperature on an absorption screen illuminated by the electromagnetic wave is measured using an infrared camera with 2-D lock-in processing technique. An antenna is ordinary used for measurement of electromagnetic field...
We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.
We have developed a 3-D electromagnetic field measurement system using 2-D lock-in amplifier. In this system, a modulated amplitude of electromagnetic wave is illuminated to an absorption screen to generate a heat distribution. A very small change of temperature on a screen illuminated with the modulated electromagnetic wave is measured using an infrared thermograph camera. To show the usefulness...
A silicon carbide (SiC) module with a high operating temperature has been designed, fabricated and tested at a device temperature of 200degC. The module has a multi- layered structure consisting of a SiC chip, a direct bond copper (DBC) SiN ceramic substrate, a copper-based plate, and water-cooled heatsink. The module was designed to have a temperature distribution of 200degC at the chip joint, 150degC...
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