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For the first time, 10nm Si-based bulk FinFETs 6T SRAM (beta ratio = 2) with novel multiple fin heights technology is successfully demonstrated with 25% better static noise margin at 0.6 V than single fin-height baseline. Meanwhile, presented technology also provides advantage in SRAM cell size by 20% scaling down. It can furthermore offer potential of beyond 10nm Si-based CMOS computing circuit technology.
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