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We demonstrate p-channel gate-source/drain underlapped silicon FinFET with HfO2 high-$\kappa $ spacer and compare it with its counterpart having SiO2 low-$\kappa $ spacer. The HfO2 spacer structure reduces series resistance in the underlap regions due to the large capacitive coupling between the gate and the underlap regions. Both drain current and transconductance of p-channel FinFET are higher...
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