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In this paper, we report the noise measurements in the RF frequency range for ultrathin body and thin buried oxide fully depleted silicon on insulator (FD-SOI) transistors. We analyze the impact of back and front gate biases on the various noise parameters; along with discussions on the secondary effects in FD-SOI transistors which contribute to the thermal noise. Using calibrated TCAD simulations,...
The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide...
Two new MOSFET structures are candidates for sub-20nm IC technologies according to International Technology Roadmap for Semiconductors. FinFET and UTB-SOI transistors are poised to replace today's MOSFETs and will provide much needed relief to ICs from their power and device variation predicaments.
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