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In this paper, we report the anomalous behavior of capacitances in halo channel MOSFET for the linear and saturation regions. Unlike MOSFETs these devices have different threshold voltage (VTH) for the DC and CV operations, and therefore cannot be modeled by conventional methods. We have investigated various cases of doping non-uniformity: Source side halo (SH), Drain side halo (DH), both side halos...
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel effects, and is intended to be used in commercial SPICE simulators for operating point information. The model is validated with measurement data from IBM 90-nm technology node using various popular threshold...
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