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We demonstrate an integrated 1310 nm DFB-EAM transponder on the hybrid silicon platform using ion implantation induced quantum well intermixing. CW laser operation up to 60°C is achieved along with 2 GHz modulator bandwidth.
Tremendous advances are being made in silicon photonics. Complicated photonic integrated circuits combining active and passive devices are becoming available for a large variety of applications from telecommunications to imaging.
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