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Experimental evidence of ballistic transport by hot electron injection into a GaAs vertical FET channel using an ultra-thin planar-doped barrier has been obtained for the first time. The spectroscopy exhibited a narrow energy spread of less than 50 meV with an estimated 10% ballistic electrons.<<ETX>>
The current-voltage characteristics of a GaAs vertical field effect transistor (VFET) with an n/sup +/ip/sup +/in/sup +/ planar doped barrier (PDB) launcher has been successfully improved by the optimisation of the launcher structure as well as the reduction of the channel width. Electron-beam direct writing has been used to obtain a small channel width of 0.1 approximately 0.15 mu m, resulting in...
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