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To enhance the impact ionization coefficient of holes, we proposed an improved solar-blind AlGaN avalanche photodiode (APD) structure by using a low-Al-composition AlGaN multiplication layer and a filter based on periodic photonic crystal together with a composition graded interlayer between separate absorption and multiplication regions. The simulation results show that the improved APD presents...
To enhance avalanche ionization, we designed a new separate absorption and multiplication AlGaN solar-blind avalanche photodiode (APD) by replacing the conventional AlGaN homogeneous multiplication region with a high/low Al content AlGaN heterostructure layer. The calculated results showed that the improved APD with the Al0.3 Ga0.7N/Al0.45Ga0.55N heterogeneous multiplication region exhibits 51% higher...
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