The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this study, the difference in electrical characteristics between the front channel and the back channel of an a‐IGZO oxide semiconductor TFT was revealed, and the cause was explained as an experimental result. It was confirmed that the front channel, which has higher mobility than the back channel, has an In‐rich layer and has a relatively low trap density. In conclusion, it was clarified that...
The epitaxially grown alkane layers on graphene are prepared by a simple drop‐casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well‐ordered and rigid alkane self‐assembled layers.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.