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High-Q inductors are important for the realization of high-performance, low-power RF-circuits. In this paper, on-chip inductors with Q-factors above 40 have been realized above the passivation of a 90-nm RF-CMOS process using wafer-level packaging (WLP) techniques . The influence of a patterned polysilicon and metal ground shield on the inductor-Q is compared and the influence of highly doped active...
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