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A DC-to-16.1 GHz wideband LNA in 90 nm digital CMOS is protected up to 4.5 kV HBM, equivalent 300 V CDM, and 1 kV HMM ESD stress by adding an area-efficient asymmetric T-diode with built-in local ESD protection in front of the RF input. Additional turn-off circuitry prevents any parasitic ESD path to be triggered in the core circuit.
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