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Heterosynaptic Plasticity
In article number 2104174, Jung‐Dae Kwon, Yonghun Kim, Byungjin Cho, and co‐workers demonstrate a highly reliable 2D MoS2/Nb2O5 memtransistor device based on Schottky barrier modulation is demonstrated. The 2D/oxide memtransistor attains dual‐terminal stimulated heterosynaptic plasticity, showing an extremely low power consumption of ≈6 pJ and reliable endurance characteristics...
Artificial synapses based on 2D MoS2 memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field‐induced defect migration. Herein, a highly reliable 2D MoS2/Nb2O5 heterostructure...
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