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This paper details the transistor aging and gate oxide reliability of Intel's 14nm process technology. This technology introduces Intel's 2nd generation tri-gate transistor and the 4th generation of high-κ dielectrics and metal-gate electrodes. The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.
The focus of this work is to demonstrate the effect of mechanical stress in the channel on the impact ionization rate (IIR) and on hot carrier reliability for both NMOS and PMOS devices. In addition, this study will explain the reason for the wide disagreement between published reports on this behavior. It is shown for the first time that the IIR reaches a maximum value with strain for NMOS and then...
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