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To achieve high power-density isolated dc-dc converter, gallium nitride high electron mobility transistors (GaN-HEMTs) and planar transformer have been used. Also, for the high power-density design, these components are placed close to each other. GaN-HEMTs are significantly affected by the leakage flux of the planar transformer, because of their lateral structure. Therefore, the mutual effects of...
In this paper, the influence of parasitic components of LLC resonant dc-dc converters operated at MHz-level switching frequency is investigated. In MHz-level switching frequency, value of the parasitic components are getting closer to value of circuit parameters. Therefore, influence of the parasitic components cannot be neglected even in the initial step of the circuit design. In particular, undesirable...
In this paper, the method of the realization of a MHz level switching frequency DC-DC converter for high power-density is presented. For high power-density, Gallium Nitride field effect transistor (GaN-FET) and current-mode resonant DC-DC converter are adopted. In addition, the proposed pulse width modulation (PWM) control method which is suitable for the isolated current-mode resonant DC-DC converter...
In this paper, a proposed pulse width modulation (PWM) control method for the isolated current-mode resonant DC-DC converter with MHz level switching frequency is presented. The circuit topology is same as a conventional resonant converter with synchronous rectification and without any additional components. The control technique for the output voltage regulation is proposed with the unique PWM control...
In this paper, a new pulse width modulation (PWM) control method for the isolated current-mode resonant converter with a fixed switching frequency is presented. The circuit topology is the same as a conventional resonant converter with synchronous rectification and without any additional components. The control technique for the output voltage regulation is proposed with the unique PWM control for...
This paper presents the power-density development of a high-frequency isolated DC-DC converter for ICT equipments. This technique results in a prototype of a 5MHz DC-DC converter module. In order to realize a prototype of the high-frequency isolated DC-DC converter, its topology is selected to be a half-bridge type current-mode resonant converter, and switching power devices of GaN-FET and Si-SBD...
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