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In this article, we investigated the fabrication and characteristics of Pd germanide Schottky contacts on n-type Ge substrate. It is shown that the lowest sheet resistance and uniform Pd germanide can be obtained by a one step RTP at 400°C for 30 sec. The proposed Pd germanide/nGe contact exhibited electron Schottky barrier height and work function of 0.565~0.577 eV and 4.695~4.702 eV, respectively...
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