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In this study, the transport property of low energy ion beam (500 eV Ne+) is evaluated under space-charge compensated situation by means of supplying low energy electrons from the Si:C-FEA with decelerative electrodes.
As the state of the art, ion implantation techniques require high-current ion beams with the lower energy, as the dimension of the devices becomes smaller. However, it is difficult to drive the lower-energy ion beams straightly, due to the huge ionic space charge. We proposed utilization of electron beam emitted from silicon field emitter arrays (Si-FEA) for compensation of the ionic positive space...
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