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We propose a multistep procedure for Ge dot growth on Si (100) substrates. This procedure includes (i) sub-monolayer C deposition on a Ge wetting layer or a Ge surface, (ii) Ge deposition at low temperature and (iii) post-annealing after Ge and C deposition for controlling size, structure and density of the Ge dots. The main effect of C on Ge wetting layer was to enhance a structure transition of...
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