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This paper presents the analysis of a highly robust low-noise amplifier subjected to high input power stress conditions. The LNA is realized in coplanar technology using the 0.25µm GaN-HEMT MMIC process from FBH, and a novel stacked topology at the first stage. The LNA survived 43dBm of input power overdrive at 5GHz measured in a coaxial test-fixture. The nonlinear measurement setup and the high power...
A robust two-stage low-noise amplifier based on GaN technology is presented. The MMIC LNA is realized using stacked transistors in the first stage to obtain high ruggedness. The LNA survived a record value of 43 dBm of input power at 5 GHz measured in a coaxial test fixture without any visible degradation of the transistors. The results prove that the new stacked architecture allows the LNA to withstand...
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