The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Temperature dependence and series resistance effect on the electrical characteristics of 40nm node epitaxial PN junction diode array for phase-change memory application were investigated in a temperature range of 233K–358K. According to dual-trench isolation and silicon epitaxial diode array process scheme, buried N+ layer (BNL) acting as word line has played a significant role of phase-change memory...
A numerical model of an epitaxial (EPI) diode array for next-generation memory device application, including phase-change memory, has been presented. According to a diode array process scheme and technology computer-aided design (TCAD) simulation results, a quasi-physical model with a buried layer dosage, EPI layer thickness, and breakdown voltage (BVD) correlation is proposed to improve...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.