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This paper presents the design of a Power Electronics Building Block (PEBB) based on 1.7 kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be cascaded to construct multilevel converters. Novel designs including gate driver with Rogowski shortcircuit protection, powerful distributed controller, isolated A/D sensor with high common-mode noise rejection, double-side cooling...
10 kV, 120 A all-SiC half-bridge modules were tested and simulated for use in a 4 kV, 100 A power electronics building block (PEBB), which are standard, multifunctional units that can replace specialized devices in order to simplify the design and reduce the cost of power electronic systems. This PEBB design consists of four 10 kV SiC MOSFET modules in an H-bridge configuration. Each switch in the...
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