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This paper presents the design of a Power Electronics Building Block (PEBB) based on 1.7 kV SiC MOSFET power modules. The PEBB is an H-bridge converter module that can be cascaded to construct multilevel converters. Novel designs including gate driver with Rogowski shortcircuit protection, powerful distributed controller, isolated A/D sensor with high common-mode noise rejection, double-side cooling...
This paper presents a systematic study of the busbar design and optimization for SiC-based H-bridge power electronics building block (PEBB) used in high-frequency and high-power applications. Step-by-step guidelines are presented in which the design considerations and analysis are given. This paper presents a double-sided busbar concept to create a compact PEBB design with improved thermal and switching...
10 kV, 120 A all-SiC half-bridge modules were tested and simulated for use in a 4 kV, 100 A power electronics building block (PEBB), which are standard, multifunctional units that can replace specialized devices in order to simplify the design and reduce the cost of power electronic systems. This PEBB design consists of four 10 kV SiC MOSFET modules in an H-bridge configuration. Each switch in the...
Stability analysis of modern three-phase ac power systems is performed using small-signal impedances identified in synchronous reference dq frame. A single-phase series voltage injection is used to perturb ac and dc systems in order to perform small-signal impedance identification. This paper proposes to use interleaved cascaded H-bridge converter to generate a voltage perturbation in series with...
This paper describes the detailed design of a singlephase multi-level single-phase shunt current injection converter based on cascaded H-bridge topology. The shunt current injection converter can inject an arbitrary current perturbation at three-phase power system interfaces, in order to identify small-signal dq impedances. Special attention is given toward the selection of inductors and capacitors,...
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