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The evolution of silicon optical modulators is recalled, from the first effect demonstrations to the characterization of high-performance devices integrated in optical waveguides. Among possibilities to achieve optical modulation in silicon-based materials, the carrier depletion effect has demonstrated good capacities. Carrier depletion in Si and SiGe/Si structures has been theoretically and experimentally...
Experimental results on an all-silicon optical modulator integrated into a SOI micro-waveguide are reported. A boron doped layer is embedded in the intrinsic region of a PIN diode, and carrier depletion is obtained by applying a reverse bias on the diode. Contrast ratio about 10 dB and insertion loss of 5 dB have been measured. A 3 dB bandwidth larger than 1 GHz is obtained with a 4 mm long phase...
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