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We report on light modulation, detection, and emission characteristics of Ge/SiGe multiple quantum well waveguides using the same epitaxial growth and fabrication steps. As an electro-absorption modulator, the device exhibits the capability to achieve high extinction ratio with low swing bias voltages and high modulation bandwidth. As a photodetector, dark currents, optical responsivities, and high...
A 23 GHz Ge/SiGe multiple quantum well electro-absorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit.
Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm2 and 10 GHz optical bandwidth at −1 V which reaches over 30 GHz at −7 V.
Room-temperature Quantum-confined Stark effect (QCSE) in Ge/SiGe multiple quantum wells (MQWs) is demonstrated using optical transmission and photocurrent measurements. Effective absorption spectra of the heterostructures are presented as a function of electrical field.
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