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The modeling of low-voltage oxide-based electric-double-layer (EDL) thin-film transistors (TFTs) is reported. A simple model with a constant mobility (i.e., 30 cm2/V · s), interface trap density (i.e., 1010 cm-2), and two-step subgap density of states (DOS) is proposed. This model can describe the electrical characteristics of EDL TFTs well. Oxide-based EDL TFTs show much lower DOS than the typical...
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