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Vertical leakage in lateral GaN devices has a significant contribution to the overall off-state current at high blocking voltages and high temperatures. It could could lead to premature breakdown before avalanche or dielectric breakdown occur. This paper identifies via experimental results and TCAD simulations the main physical mechanisms responsible for the vertical leakage through the epi and transition...
This study presents a detailed analysis of the Plasma-enhanced chemical vapour deposition (PECVD) silicon-nitride/semiconductor interface of gallium nitride (GaN) transistors through the study of the transfer characteristics of a large-gate-area metal-insulator-semiconductor field-effect transistor (MISFET). Id–Vg measurements were performed on several MISFETs across the wafer and for all of them...
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