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This paper presents a consistent theoretical study of the Trench Insulated Gate Bipolar Transistor (TIGBT). Specific on-state physical and geometrical effects, such as accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted...
This paper describes the design of a silicon-based microsensor array for application in gas or odour monitoring. Individual sensor cells consist of both lateral and vertical electrode pairs to measure film conductance and/or capacitance. The fabrication process involves standard silicon technologies to integrate a platinum or nickel-iron heater below the sensor cells. A simulation of the device...
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