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A new and simple approach for nonlinear modelling of the dynamic self-heating effect in bulk complementary metal–oxide semiconductor (CMOS) field effect transistors is presented. Low-frequency S-parameter measurements are performed in 28 nm bulk CMOS technology at room temperature between a 10 kHz and 3 GHz frequency range and the thermal impedance (ZTH) of the devices is extracted. The proposed model...
In this paper, self-heating of a state-of-the-art SiGe:C BiCMOS Heterojunction Bipolar Transistor (HBT) is studied by means of 3D thermal TCAD simulations. Steady-state, large signal and small signal transient simulations are performed on different device structures to investigate the impact of backend layers on thermal impedance (ZTH). In addition, the simulation results are verified by DC and low...
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