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A new and simple approach for nonlinear modelling of the dynamic self-heating effect in bulk complementary metal–oxide semiconductor (CMOS) field effect transistors is presented. Low-frequency S-parameter measurements are performed in 28 nm bulk CMOS technology at room temperature between a 10 kHz and 3 GHz frequency range and the thermal impedance (ZTH) of the devices is extracted. The proposed model...
The influence of electrothermal behaviour on radio frequency (RF) performances of 28 nm bulk complementary metal–oxide semiconductor technology is examined. Biased continuous-wave RF and pulsed RF (applying different DC pulse and RF pulse width combinations) characterisations are performed within the 1–30 GHz frequency domain at room temperature and the transit frequency (fT) is extracted at 15 GHz...
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