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In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation of this device. The simulation results obtained using this model are in close agreement with numerical calculation results. This model can be implemented with a hardware description language (HDL) language...
Recently, Carbon nanotube field-effect transistors (CNTFETs) have been studied as an interesting alternative to CMOS transistors. CNTFETs can be fabricated with Ohmic or Schottky type contacts. In this paper, we present a compact model for the tunnel current trough a Schottky barrier based on the Wentzel-Kramers-Brillouin, "WKB" approximation of the transmission coefficient [1]. The results...
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