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This work reports an n+ source pocket doped PIN gate all around tunnel FET (PNIN-GAA-TFET) with Palladium as a catalytic metal gate for hydrogen detection. The basis of sensing of H2 molecules is the dissociation of H2 into Hydrogen atoms followed by their diffusion into the Palladium (Pd) gate leading to formation of a dipole layer due to the polarization of H atoms at the Pd-SiO2 interface. It is...
In this work, the viability of different materials as the source region of a Double-Gate Tunnel FET (DG-TFETs) has been studied. The study essentially focuses on obtaining superior current switching ratio (ION/IOFF), threshold voltage (Vth) and subthreshold swing (SS) in DG-TFETs. In this regard, a comparative analysis of electrical and analog parameters of DG-TFETs with Silicon (Si), Germanium (Ge)...
The paper presents a novel highly sensitive Hetero-Dielectric-Gate All Around Tunneling FET (HD-GAA-TFET) based Hydrogen Gas Sensor, incorporating the advantages of band to band tunneling (BTBT) mechanism. Here, the Palladium supported silicon dioxide is used as a sensing media and sensing relies on the interaction of hydrogen with Palladium-SiO2-Si. The high surface to volume ratio in the case of...
In this work, the temperature associated reliability issues of heterogeneous gate dielectric-gate all around-tunnel FET (HD-GAA-TFET) has been addressed, and the results are simultaneously compared with gate all around tunnel FET (GAA-TFET). This is done by investigating the effect of interface trap charges such as donor (positive interface charges) and acceptor (negative interface charges) on the...
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