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This work optimizes the gate engineering scheme (both gate stack and gate metal workfunction engineering) of Stacked Gate (SG) Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire MOSFET at 300 K for improved analog and intermodulation performance. This has been done by evaluating and analyzing the metrics such as Switching Ratio, Subthreshold Swing (SS), Device Efficiency, channel and output...
In this work, detailed investigation of linear behavior of Gate Metal Engineered (GME) Omega Gate Silicon Nanowire (SiNW) MOSFET has been studied and results so obtained are simultaneously compared with Omega gate SiNW MOSFET using TCAD quantum study. In the comparison of GME-Omega Gate-SiNW MOSFET and Omega-Gate SiNW MOSFET, the former shows superior linearity performance in terms of higher order...
This work demonstrates that with the incorporation of gate stack (GS) on GEWE-SiNW MOSFET, the analog and linearity performance of the device enhances in terms of transconductance, output conductance and device efficiency. The important Linearity figure of merits (FOMs) such as second order voltage intercept point (VIP2), third order voltage intercept point (VIP3), third order input intercept point...
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