The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
GaN/AlGaN/GaN based normally-off high electron mobility transistors (HEMTs) are promising candidates for future high-power as well as high-frequency applications. Here, a physics-based analytical model is presented to explain the effect of a thick GaN cap layer on the two-dimensional electron gas (2DEG) density at the AlGaN/GaN interface, and the surface barrier height in a AlGaN/GaN heterostructure...
A modeling framework, previously applied to magnetic field sensing in a quantum biological system, is extended here to study the optical and spin dynamics of the diamond nitrogen-vacancy (NV−) center. This points the way towards diamond-based precision magnetometry.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.